for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 1 amplifiers - l ine a r & p ower - sm t HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710 general description features functional diagram the h m c409 lp 4 & h m c409 lp 4 e are high efficiency gaas i nga p hbt mmi c p ower amplifers operating from 3.3 to 3.8 ghz. the amplifer is packaged in a low cost, leadless sm t package. utilizing a minimum of external components the amplifer provides 31 db of gain and +32.5 dbm of saturated power from a +5v supply voltage. the power control (vpd) can be used for full power down or rf output power/current control. f or +22 dbm of d m output power (64 qa m , 54 m bps), the h m c409 lp 4 & h m c409 lp 4 e achieve an error vector magnitude ( e v m ) of 2%, meeting w i m ax 802.16 linearity requirements. gain: 31 db 40% p a e @ +32.5 dbm pout 2% e v m @ p out = +22 dbm with 54 m bps of d m s ignal +46 dbm o utput ip 3 i ntegrated p ower control (vpd) s ingle +5v s upply electrical specifcations, t a = +25 c, vs = +5v, vpd = +5v, vbias=+5v typical applications this amplifer is ideal for use as a power amplifer for 3.3 - 3.8 ghz applications: ? w i m ax 802.16 ? f ixed w ireless access ? w ireless l ocal l oop p arameter m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. units f requency r ange 3.3 - 3.4 3.4 - 3.6 3.6 - 3.8 ghz gain 30 32 29 31.5 28 30 db gain variation o ver temperature 0.04 0.05 0.04 0.05 0.035 0.045 db/ c i nput r eturn l oss 10 15 15 db o utput r eturn l oss 13 14 10 db o utput p ower for 1db compression ( p 1db) 28 30 28 30.5 28 30.5 dbm s aturated o utput p ower ( p sat) 32 32.5 32 dbm o utput third o rder i ntercept ( ip 3) [2] 41 45 42 45.5 41 45 dbm e rror vector m agnitude @ 3.5 ghz (54 m bps of d m s ignal @ +22 dbm p out) 2 % n oise f igure 5.8 5.8 6 db s upply current ( i cq) vs= vcc1 + vcc2= +5v 615 615 615 ma control current ( i pd) vpd = +5v 4 4 4 ma s witching s peed t o n, t o ff 20 20 20 ns bias current ( i bias) 10 10 10 ma n ote 1: s pecifcations and data refect hmc409lp 4 measured using the application circuit found herein. contact the hm c applications group for assistance in optimizing performance for your application. n ote 2: two-tone output power of +15 dbm per tone, 1 m hz spacing.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 2 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature power down isolation vs. temperature -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 2 2.5 3 3.5 4 4.5 5 s21 s11 s22 response (db) frequency (ghz) 20 23 26 29 32 35 38 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c gain (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c isolation (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c isolation (db) frequency (ghz) HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 3 amplifiers - l ine a r & p ower - sm t p1db vs. temperature psat vs. temperature output ip3 vs. temperature power compression @ 3.5 ghz gain & power vs. supply voltage noise figure vs. temperature 22 24 26 28 30 32 34 36 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 22 24 26 28 30 32 34 36 3 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 +25 c +85 c -40 c psat (dbm) frequency (ghz) 30 34 38 42 46 50 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 0 5 10 15 20 25 30 35 40 -20 -16 -12 -8 -4 0 4 8 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 28 29 30 31 32 33 34 35 4.75 5 5.25 gain psat p1db gain (db), p1db (d bm), psat (dbm) vcc supply voltage (vdc) 0 2 4 6 8 10 12 3 3.2 3.4 3.6 3.8 4 +25 c +85 c -40 c noise figure (db) frequency (ghz) HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 4 gain, power & quiescent supply current vs. vpd @ 3.5 ghz 0 5 10 15 20 25 30 35 40 0 100 200 300 400 500 600 700 800 3 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25 5.5 gain psat p1db icc gain (db), p1db (d bm), psat (dbm) icc (ma) vpd (vdc) 2 2.4 2.8 3.2 3.6 4 4.4 -20 -16 -12 -8 -4 0 4 8 power dissipation (w) input power (dbm) max pdiss @ +85c power dissipation 0 2 4 6 8 10 12 14 10 12 14 16 18 20 22 24 26 28 30 +25 c +85 c -40 c error vector magnitude (%) output power (dbm) evm vs. temperature @ 3.5 ghz ofdm 54 mbps signal HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 5 amplifiers - l ine a r & p ower - sm t outline drawing no t es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d imensions a re in in ch es [ millime t ers ] 3. le ad sp ac in g t oler a n c e is non -cu m u l at i v e . 4. p ad bu rr len gth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll not e xc ee d 0.05mm. 6. a ll g ro u n d le ad s a n d g ro u n d p add le m u s t b e sol d ere d to p cb rf g ro u n d. 7. refer to h i tt i t e a ppli cat ion not e for s ugg es t e d l a n d p att ern . absolute maximum ratings collector bias voltage (vcc1, vcc2) +5.5 vdc control voltage (vpd) +5.5 vdc rf i nput p ower ( rfin )(vs = vpd = +5vdc) +10 dbm junction temperature 150 c continuous p diss (t = 85 c) (derate 57.5 m w /c above 85 c) 3.74 w thermal r esistance (junction to ground paddle) 17.4 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vs (vdc) i cq (ma) 4.75 516 5.0 615 5.25 721 typical supply, current vs. supply voltage, vcc1 = vcc2 = vpd HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710 p art n umber p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c409 lp 4 l ow s tress i njection m olded p lastic s n/ p b s older msl 3 [1] h409 xxxx h m c409 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 3 [2] h409 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx package information ele ct ros tat ic sensi t i v e de v ic e o b ser v e ha n d lin g pre caut ions
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 6 application circuit r ecommended component values c1 - c5 100p f c6 - c7 1000p f c8 10 p f c9 0.5 p f c10 1.6 p f c11 4.7 f l 1, l 2 3.9 nh l 3 2.2 nh r 1 56 o hm t l 1 t l 2 t l 3 i mpedance 50 o hm 27 o hm 50 o hm p hysical l ength 0.068 0.062 0.164 e lectrical l ength 12? 11? 29? p cb m aterial: 10 mil r ogers 4350, e r = 3.48 HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com 9 9 - 7 amplifiers - l ine a r & p ower - sm t p in n umber f unction description i nterface s chematic 1-3, 5, 6, 8, 10 -14, 18, 19, 21, 22, 24 n /c n o connection required. these pins may be connected to rf /dc ground without affecting performance. 4 rfin this pin is ac coupled and matched to 50 o hms. 7 vpd p ower control pin. f or maximum power, this pin should be connected to 5v thru a 56 ? resistor. a high-voltage or small resistor is not recommended for lower idle current. this voltage can be reduced or the resistor increased. 9 vbias dc power supply pin for bias circuitry 15, 16, 17 rfo ut rf output and dc bias for the output stage. 20 vcc2 p ower supply voltage for the second amplifer stage. e xternal bypass capacitors and pull up choke are required as shown in the application schematic. 23 vcc1 p ower supply voltage for the frst amplifer stage. e xternal bypass capacitors are required as shown in the application schematic. g n d ground: backside of package has exposed metal ground slug that must be connected to ground thru a short path. vias under the device are required. pin descriptions HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ine a r & p ower - sm t 9 9 - 8 evaluation pcb the circuit board used in the application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be con - nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 108355 [1] i tem description j1 - j2 p cb m ount sm a rf connector j3, j4 2 mm dc header c1 - c5 100 p f capacitor, 0402 p kg. c6 - c7 1000 p f capacitor, 0603 p kg. c8 10 p f capacitor, 0402 p kg. c9 0.5 p f capacitor, 0603 p kg. c10 1.6 p f capacitor, 0603 p kg. c11 4.7 f , tantalum l 1, l 2 3.9 nh i nductor, 0603 p kg. l 3 2.2 nh i nductor, 0402 p kg. toko r 1 56 o hm r esistor, 0603 p kg. u1 h m c409 lp 4 / h m c409 lp 4 e amplifer p cb [2] 108353 e val board [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350, e r = 3.48 HMC409LP4 / 409lp4e gaas ingap hbt 1 watt power amplifier, 3.3 - 3.8 ghz v03.0710
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